Low phase‐noise high output power 176‐GHz voltage‐controlled oscillator in a 130‐nm BiCMOS technology-Reference-Cited by-同舟云学术

Low phase‐noise high output power 176‐GHz voltage‐controlled oscillator in a 130‐nm BiCMOS technology

Published:2019-08-30 Issue:14 Volume:13 Page:2490-2494
ISSN:1751-8733
Container-title:IET Microwaves, Antennas & Propagation
language:en
Short-container-title:IET Microwaves, Antennas & Propagation

Author:

Bello Habeeb¹,Pantoli Leonardo¹,Ng Herman Jalli²,Kissinger Dietmar³,Leuzzi Giorgio¹

Affiliation:

1. Department of Industrial and Information Engineering and EconomicsUniversity of L'Aquila67100L'AquilaItaly

2. IHP – Leibniz‐Institut für innovative Mikroelektronik15236Frankfurt (Oder)Germany

3. Institute of Electronic Devices and CircuitsUlm UniversityAlbert‐Einstein‐Allee 4589081UlmGermany

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2019.0397

Reference20 articles.

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2. 300 GHz integrated heterodyne receiver and transmitter with on‐chip fundamental local oscillator and mixers;Kim S.;IEEE Trans. THz Sci. Technol.,2015

3. A 240 GHz Fully Integrated Wideband QPSK Transmitter in 65 nm CMOS

4. A 240 GHz Fully Integrated Wideband QPSK Receiver in 65 nm CMOS

5. Tousi Y.M. Momeni O. Afshari E.: ‘A 283‐to‐296 GHz VCO with 0.76 mW peak output power in 65 nm CMOS’.2012 IEEE Int. Solid‐State Circuits Conf. ISSCC Digest of Technical Papers San Francisco CA USA February2012 pp.258–260

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