Bipolar operation of power junction field effect transistors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19800218?crawler=true&mimetype=application/pdf
Reference7 articles.
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET;IEEE Journal of the Electron Devices Society;2017-01
2. Static Induction Transistors;Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19
3. Silicon Carbide Junction Field-Effect Transistors (SiC JFETs);Wiley Encyclopedia of Electrical and Electronics Engineering;2014-12-15
4. A Comparative Study of Gate Structures for 9.4-kV 4H-SiC Normally On Vertical JFETs;IEEE Transactions on Electron Devices;2012-09
5. Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs;Materials Science Forum;2011-03
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