Low operating current and high temperature operation of 650 nm AlGaInP visible laser diodes with real refractive index guided self-aligned structure-Reference-Cited by-同舟云学术

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Low operating current and high temperature operation of 650 nm AlGaInP visible laser diodes with real refractive index guided self-aligned structure

Published:1997 Issue:14 Volume:33 Page:1223
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Imafuji O.,Yuri M.,Hashimoto T.,Ishida M.,Mannoh M.,Kawata T.,Ogawa H.,Yoshikawa A.,Itoh K.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19970832?crawler=true&mimetype=application/pdf

Reference8 articles.

1. 600 mW CW single-mode GaAlAs triple-quantum-well laser with a new index guided structure

2. Low-Noise and High-Power GaAlAs Laser Diodes with a New Real Refractive Index Guided Structure

3. Analysis of GaInP/AlGaInP compressive strained multiple-quantum-well laser

4. Stable operation of self‐sustained pulsation in 650‐nm‐band AlGaInP visible lasers with highly doped saturable absorbing layer

5. High-Power InGaAlP Laser Diodes for High-Density Optical Recording

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithically-Integrated Dual-Wavelength Laser Diodes for Optical Pickups.;The Review of Laser Engineering;2002

2. Compound Heterostructure Semiconductor Lasers and Photodetectors;Low Temperature Electronics;2001

3. Epitaxial regrowth of AlGaInP on AlGaInP grooved structure by MOVPE;Journal of Crystal Growth;2000-12

4. High-power red lasers for DVD-RAM drives;SPIE Proceedings;1999-04-01

5. Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE);Journal of Crystal Growth;1998-12

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