Avalanche noise in submicrometre pin diodes
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19970828?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Noise characteristics of thin multiplication region GaAs avalanche photodiodes
2. The distribution of gains in uniformly multiplying avalanche photodiodes: Theory
3. Theory of carrier multiplication and noise in avalanche devices—Part II: Two-carrier processes
4. Breakdown voltage in ultra-thin pin diodes
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1. Nonlocal impact ionization and avalanche multiplication;Journal of Physics D: Applied Physics;2010-06-03
2. Self-Consistent 2-D Monte Carlo Simulations of InSb APD;IEEE Transactions on Electron Devices;2005-10
3. Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions;Journal of Applied Physics;2002-10-15
4. Very low noise avalanche detection;IEEE Transactions on Electron Devices;2001-07
5. Avalanche noise measurement in thin Si p+-i-n+ diodes;Applied Physics Letters;2000-06-26
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