High-power diode lasers for optical recording with operating lifetimes in excess of 10 000 h-Reference-Cited by-同舟云学术

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High-power diode lasers for optical recording with operating lifetimes in excess of 10 000 h

Published:1982 Issue:4 Volume:18 Page:153
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Ettenberg M.,Botez D.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19820105?crawler=true&mimetype=application/pdf

Reference10 articles.

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 10000 h, 30–50 mW CW operation of 670–690 nm visible laser diodes;Electronics Letters;1994-08-04

2. Review of the Structures and Properties of Fabry–Perot Cavity Junction Lasers;Physics of Semiconductor Lasers;1991

3. Ten-thousand-hours CW operation of 780 nm high-power AlGaAs laser with thin-tapered thickness active layer;Electronics Letters;1989

4. References;The Physics and Applications of Amorphous Semiconductors;1988

5. Thermally accelerated life testing of single mode, double-heterostructure, AlGaAs laser diodes operated pulsed at 50mW peak power;IEEE Journal of Quantum Electronics;1985-04

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