High-quantum-efficiency low-threshold microcleaved AlxGa1−xAs lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19820469?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modeling of the spectral, power-current, and threshold characteristics of an injection laser;Technical Physics Letters;1999-02
2. About output characteristics calculation of injection laser;1998 4th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-98 (Cat. No.98EX179);1998
3. Performance of dry‐etched short cavity GaAs/AlGaAs multiquantum‐well lasers;Journal of Applied Physics;1988-03
4. One‐step two‐level etching technique for monolithic integrated optics;Applied Physics Letters;1987-12-28
5. Short cavity GaAs/AlGaAs multiquantum well lasers by dry etching;Applied Physics Letters;1986-10-20
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