1. High turn-off current capability of parallel-connected 4.5 kv trench iegt
2. Piazzesi A. Meysenc L.:Series connection of 3.3 kV IGBTs with active voltage balancing. In: Power Electronics Specialists Conference Aachen Germany June2004. Proceedings of the 35th IEEE Power Electronics Specialists Conference pp.893–898.IEEE Piscataway NJ(2004)
3. Shenoy P.M. et al.:Application specific 1200V planar and trench IGBTs. In: 6th Applied Power Electronics Conference and Exposition Twenty‐First Annual IEEE.Dallas TX p.5(2006)
4. A Planar-Gate High-Conductivity IGBT (HiGT) With Hole-Barrier Layer
5. Kitagawa M. et al.:A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor. In: Electron Devices Meeting Technical Digest.Washington DC pp.679–682(1993)