High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application-Reference-Cited by-同舟云学术

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High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Published:2021-03-16 Issue: Volume: Page:
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Zhou Weijun¹,Ye Qing¹,Dai Junyu¹,Guo Tianyu¹,Zhang Jinqiu¹,Li Zheng¹,Wu You¹,Zhao Ziyu²^ORCID,Zhao Ziqi¹³,Wei Zhiheng¹

Affiliation:

1. Department of Microelectronic Science and Engineering Ningbo University Ningbo China

2. College of Sciences Xi'an Shiyou University Xi'an China

3. Vastity Electronic Technology (Ningbo) Co. Ltd. Ningbo China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Ningbo

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mna2.12059

Reference24 articles.

1. A survey of Gallium Nitride HEMT for RF and high power applications;Fletcher A.A.;Superlattices Microstruct.,2017

2. GaN power transistors on Si substrates for switching applications;Ikeda N.;Proc. IEEE,2010

3. GaN technology for power electronic applications: A review;Flack T.J.;J. Electron. Mater.,2016

4. Reliability assessment of InAlN/GaN HFETs with lifetime 8.9 × 106 h;Wang Y.;IEEE Electron Device Lett.

5. 30 nm T‐gate enhancement‐mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications;Murugapandiyan P.;J. Semicond.,2017

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