Manufacturing‐tolerant compact red‐emitting laser diode designs for next generation applications
Author:
Affiliation:
1. School of Physics and Astronomy, Cardiff UniversityQueens Buildings, The ParadeCardiffCF24 3AAUK
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-opt.2014.0093
Reference25 articles.
1. CrumpP.KniggeS. andMaaβdorfA.et al.: ‘Low‐loss smile‐insensitive external frequency‐stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high efficiency’.Proc. of SPIE 2013 8605 pp. 86050T‐1–86050T‐12
2. Miniaturized highly brilliant diode laser modules for future display applications
3. Combination of Low-Index Quantum Barrier and Super Large Optical Cavity Designs for Ultranarrow Vertical Far-Fields From High-Power Broad-Area Lasers
4. High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide
5. High‐power low vertical beam divergence 800‐nm‐band double‐barrier‐SCH GaAsP–(AlGa) as laser diodes;Malag A.;IEEE Photonics Technol. Lett.,2006
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