High-power 0.98μm GaInAs strained quantum well lasers for Er3+-doped fibre amplifier-Reference-Cited by-同舟云学术

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High-power 0.98μm GaInAs strained quantum well lasers for Er3+-doped fibre amplifier

Published:1989 Issue:23 Volume:25 Page:1563
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Okayasu M.,Takeshita T.,Yamada M.,Kogure O.,Horiguchi M.,Fukuda M.,Kozen A.,Oe K.,Uehara S.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19891050?crawler=true&mimetype=application/pdf

Reference5 articles.

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Growth and spectroscopic characteristics of Er-doped CeF3 crystal;Journal of Crystal Growth;2011-03

3. Er,Yb:YAl3(BO3)4—efficient 1.5 μm laser crystal;Applied Physics B;2009-08-20

4. High-power weakly index-guided buried-stripe type 980 nm laser diodes: design, fabrication, and highly reliable operation;physica status solidi (a);2003-01

5. Spectroscopic properties of lead fluoroborate glasses codoped with Er^3+ and Yb^3+;Journal of the Optical Society of America B;2002-12-02

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