Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes-Reference-Cited by-同舟云学术

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Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes

Published:1989 Issue:24 Volume:25 Page:1644
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Tai K.,Fischer R.J.,Wang K.W.,Chu S.N.G.,Cho A.Y.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19891102?crawler=true&mimetype=application/pdf

Reference10 articles.

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Advanced VCSEL Technology: Self-Heating and Intrinsic Modulation Response;IEEE Journal of Quantum Electronics;2018-06

3. Oxide-Confined VCSELs for High-Speed Optical Interconnects;IEEE Journal of Quantum Electronics;2018-06

4. Vertical-Cavity Surface-Emitting Lasers;Handbook of Optoelectronic Device Modeling and Simulation;2017-09-25

5. The effect of graphene for large aperture vertical cavity surface emitting laser;International Photonics and OptoElectronics Meetings;2014

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