Electronic characterisation of atomistic modelling based electrically doped nano bio p‐i‐n FET-Reference-Cited by-同舟云学术

Electronic characterisation of atomistic modelling based electrically doped nano bio p‐i‐n FET

Published:2016-09 Issue:5 Volume:10 Page:273-285
ISSN:1751-8601
Container-title:IET Computers & Digital Techniques
language:en
Short-container-title:IET Computers & Digital Techniques

Author:

Dey Debarati¹,Roy Pradipta¹²,De Debashis¹³

Affiliation:

1. Department of Computer Science and EngineeringWest Bengal University of TechnologyBF‐142, Sector 1, Salt Lake CityKolkata700 064West BengalIndia

2. Department of Computer Science and EngineeringSwami Vivekananda Institute of Science and TechnologyDakshin Gobindapur. P.S.: SonarpurKolkata700 145West BengalIndia

3. Department of PhysicsUniversity of Western AustraliaM013, 35 Stirling Highway, CrawleyPerthWA6009Australia

Funder

University Grants Commission

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cdt.2015.0156

Reference62 articles.

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3. Doping-induced realignment of molecular levels at organic–organic heterojunctions

4. Effect of molecular electrical doping on polyfuran based photovoltaic cells

5. Rudaz S.L.: ‘Maximizing electrical doping while reducing material cracking in III–V nitride semiconductor devices’.U.S. Patent No. 5 729 029 17 March1998

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