Affiliation:
1. School of Physics and Electronic Information Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials Inner Mongolia Normal University Huhhot Inner Mongolia China
2. Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials Inner Mongolia Normal University Huhhot Inner Mongolia China
3. School of Physical Science and Technology Inner Mongolia University Huhhot Inner Mongolia China
Abstract
AbstractExtra cation incorporations have been proved to enhance the properties of Cu2ZnSn(S, Se)4 materials, and help to obtain high‐efficiency solar cells. In this work, the authors study the influence of the extra tiny Mg2+ doping on the properties of Cu2ZnSn(S, Se)4 films. Through tuning the amount of Mg into the precursor solution, the crystallization, morphology, light absorption, and electrical properties all have been improved and can reach the optimum at 3% Mg‐doping, which is in favour of high‐performance CZTSSe devices. The authors’ finding also demonstrates Mg element can be regarded as the new candidate for extra cation incorporations.
Publisher
Institution of Engineering and Technology (IET)
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering