Annealing behaviour of gamma-ray-induced electron traps in LEC n-InP
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19830415?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low energy proton irradiation effects on InP/InGaAs DHBTs and InP-base frequency dividers;Young Scientists Forum 2017;2018-03-05
2. Self-annihilation of electron-irradiation-induced defects in InAsxP1−x∕InP multiquantum well solar cells;Applied Physics Letters;2007-06-04
3. Minority-carrier lifetime damage coefficient of irradiated InP;Journal of Applied Physics;1997-09
4. Characterization of Electron Traps in n-InP Induced by Hydrogen Plasma;Materials Science Forum;1995-11
5. Deep Electron Traps in n-InP Induced by Plasma Exposure;Japanese Journal of Applied Physics;1995-10-15
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