Substrate bias effect for C-MOS operational amplifier using SIMOX technology
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19830027?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Ham, W.E.: The silicon on sapphire MOS capacitor, (The Electrochemical Society 1974), p. 345
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Anomalous behaviour of n-channel MOS transistor characteristics in the temperature range 4.2–14 K;Solid-State Electronics;1989-08
2. Low-Temperature CMOS;VLSI Electronics Microstructure Science;1989
3. Influence of substrate freeze-out on the characteristics of MOS transistors at very low temperatures;Solid-State Electronics;1987-03
4. Synthesis of silicon dioxide by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1984-02
5. Fully isolated lateral bipolar—MOS transistors fabricated in zone-melting-recrystallized Si films on SiO2;IEEE Electron Device Letters;1983-08
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