Regrowth of amorphous layers in silicon-on-insulator structures formed by the implantation of oxygen
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19830328?crawler=true&mimetype=application/pdf
Reference13 articles.
1. Hayaski, T., Okamoto, H., and Homma, Y.: Inst. of Phys. Conf. Ser. No. 57, 1981), p. 533
2. Hemment, P.L.F., Maydell-Ondrusz, E., Stephens, K.G., Butcher, J.B., Ioannau, D., and Alderman, J.: IBMM82, Grenoble, France 1982 September)
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Amorphisation and solid phase epitaxial regrowth of the silicon overlayer in SIMOX structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04
2. Applications of SIMOX technology to CMOS LSI and radiation-hardened devices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01
3. Temperature dependence of Hall mobility and electrical conductivity in SIMOX films;Electronics Letters;1984
4. Characterisation of Device Grade Soi Structures formed by Implantation of High Doses of Oxygen;MRS Proceedings;1983
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