Automatic measurement of minority carrier lifetimes in silicon for nonuniform doped samples using the Zerbst method
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
General Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-i-1.1987.0032?crawler=true&mimetype=application/pdf
Reference35 articles.
1. Ross, B.: ‘Survey of literature on minority carrier lifetimes in silicon and related topics’, Lifetime Factors in Silicon, 1980), p. 14–28 ASTM STP 712, American Society for Testing Materials
2. Gosney, W.M.: ‘Dynamic storage time measurements on metal oxide semiconductor random access memory circuits’, Lifetime Factors in Silicon, 1980), p. 58–70 ASTM STP 712, American Society for Testing Materials
3. Mamine, T., Hayashi, H., Matsushita, T., Yanada, T., Kumagai, O., Nishiyama, K., and Kaneko, K.: ‘Control of lifetime in silicon by implantation of iron’, Lifetime Factors in Silicon, 1980), p. 119–135 ASTM STP 712, American Society for Testing Materials
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