Transimpedance amplifiers with 133 GHz bandwidth on 130 nm indium phosphide double heterojunction bipolar transistors
Author:
Affiliation:
1. Department of Microtechnology and NanoscienceChalmers University of TechnologyGothenburgSweden
2. Department of Electronic & Electrical EngineeringUniversity College LondonLondonUnited Kingdom
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2018.8135
Reference8 articles.
1. High-speed 850 nm VCSELs with 28 GHz modulation bandwidth operating error-free up to 44 Gbit/s
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3. THz InP bipolar transistors-circuit integration and applications
4. 110+ GHz transimpedance amplifier in InP‐HBT technology for 100 Gbit ethernet;Fields C.H.;Microw. Wirel. Compon. Lett.,2010
5. Staggered gain for 100+ GHz broadband amplifiers;Kim J.;J. Solid‐State Circuits,2011
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