450 × 580 µm 2 Pixel incorporating TX and coherent RX in CMOS for mm‐wave active imaging using a single reflector
Author:
Affiliation:
1. The University of Texas at Dallas800W Campbell RoadRichardsonTX75080USA
Funder
Samsung
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2018.1086
Reference10 articles.
1. A fully integrated 320 GHz coherent imaging transceiver in 130 nm SiGe BiCMOS;Jiang C.;J. Solid‐State Circuits,2016
2. 160 GHz to 1 THz multi‐color active imaging with a lens‐coupled SiGe HBT chip‐set;Statnikov K.;Trans. Microw. Theory Tech.,2015
3. Silicon integrated 280 GHz imaging chipset with 4 × 4 SiGe receiver array and CMOS source;Sengupta K.;Trans. Terahertz Sci. Tech.,2015
4. Design and Demonstration of 820-GHz Array Using Diode-Connected NMOS Transistors in 130-nm CMOS for Active Imaging
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