Precharge free dynamic content addressable memory
Author:
Affiliation:
1. Department of Electronics and Communication EngineeringNational Institute of Technology MeghalayaShillong793003India
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2018.0592
Reference5 articles.
1. A 9‐T 833‐MHz 1.72‐fJ/Bit/search quasi static ternary fully associative cache tag with selective matchline evaluation for wire speed applications;Mishra S.;Trans. Circuits Syst. I Reg. Papers,2016
2. Mundy J.L.: ‘High density four transistor MOS content addressable memory’ U.S. Patent 3 701 980 issued October1972
3. Dynamic cross‐coupled bit‐line content addressable memory cell for high‐density arrays;Wade J.P.;J. Solid‐State Circuits,1987
4. Decoupled 4T dynamic CAM suitable for high density storage
5. Dynamic ternary CAM for hardware search engine
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