Internally wavelength stabilized 910 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions
Author:
Affiliation:
1. Ferdinand‐Braun‐Institut gGmbH Leibniz‐Institut für Höchstfrequenztechnik Berlin Germany
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/ell2.12366
Reference11 articles.
1. Monolithically stacked high-power diode laser bars in quasi-continuous-wave operation exceeding 500 W
2. High power and high efficiency 1.8-kW pulsed diode laser bar
3. High power, 14xx‐nm eye‐safe, epitaxially stacked pulse laser for detection and ranging applications;Higa Y.;Proc. ISLC,2018
4. High Efficiency 1.9 Kw Single Diode Laser Bar Epitaxially Stacked With a Tunnel Junction
5. Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions
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1. High brightness nanosecond-pulse operation of 905 nm distributed Bragg reflector tapered-ridge-waveguide lasers with multiple active regions;High-Power Diode Laser Technology XXII;2024-03-12
2. Distributed feedback broad area lasers with multiple epitaxially stacked active regions and tunnel junctions;Optics Letters;2023-12-11
3. High Power, Internally Wavelength Stabilized Diode Lasers with Epitaxially-Stacked Multiple Active Regions for LiDAR Applications;2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC);2023-06-26
4. Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions;Electronics Letters;2022-12-03
5. Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm;IEEE Photonics Journal;2022-12
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