Measurement of the base diffusion profile of a narrow-basewidth transistor-Reference-Cited by-同舟云学术

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Measurement of the base diffusion profile of a narrow-basewidth transistor

Published:1976 Issue:9 Volume:12 Page:221
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Booth R.C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19760171?crawler=true&mimetype=application/pdf

Reference9 articles.

1. Emulsitone Co., 41 East Willow Street, Millburn, NJ 07041, USA

2. Donovan, R.P., and Evans, R.A.: ‘Incremental sheet resistivity technique for determining diffusion profiles’, Silicon device processing, (National Bureau of Standards, Special Publication 337, NY 1970), p. 123–131

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of a circular Hall plate with equal finite contacts;Solid-State Electronics;1981-01

2. Analysis of Hall-plate shaped Van der Pauw structures;Solid-State Electronics;1980-06

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