Effects of channelling on the electrical properties of donor implanted GaAs

Author:

Harris T.J.,Sealy B.J.,Surridge R.K.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference4 articles.

1. Surridge, R.K., Sealy, B.J., D'Cruz, A.D.E., and Stephens, K.G.: Annealing kinetics of donor ions implanted into GaAs, 1977),IoP conference series 33a, (to be published)

2. Sealy, B.J., Surridge, R.K., Bell, E.C., and D'Cruz, A.D.E.: Donor activity in ion implanted GaAs, 1976), p. 69–74 IoP conference series 28

3. Surridge, R.K., and Sealy, B.J.: Comparison of Sn, Ge, Se and Te ion implanted GaAs, (to be published)

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Planar Channeling of Si Implants in GaAs;Ion Implantation: Equipment and Techniques;1983

2. Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication;IEE Proceedings I Solid State and Electron Devices;1981

3. Ion doping of gallium arsenide;Soviet Physics Journal;1980-01

4. A comparison of Sn-, Ge-, Se- and Te-ion-implanted GaAs;Journal of Physics D: Applied Physics;1977-04-21

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