Hydrogenated amorphous silicon waveguide with vertical pin structure for infrared detection
Author:
Affiliation:
1. Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)TsukubaJapan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.2359
Reference11 articles.
1. Sub‐1 dB/cm submicrometer‐scale amorphous silicon waveguide for backend on‐chip optical interconnect;Takei R.;Opt. Express,2014
2. Low‐loss and low wavelength‐dependence vertical interlayer transition for 3D silicon photonics;Takei R.;Opt. Express,2015
3. A 2.5 ns switching time MachZehnder modulator in as‐deposited a‐Si:H;Rao S.;Opt. Express,2012
4. Carrier injection refractive index changes in low-temperature grown silicon waveguide
5. Strain‐induced band gap shrinkage in Ge grown on Si substrate;Ishikawa Y.;Appl. Phys. Lett.,2003
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