Ka‐band VCO with parasitic capacitance cancelling technique
Author:
Affiliation:
1. Department of ECE and INMCSeoul, National UniversitySeoulKorea
2. Agency for Defense DevelopmentDaejeonKorea
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.3799
Reference7 articles.
1. Wide tuning range W-band Colpitts VCO in 90 nm CMOS
2. High output power and high fundamental leakage suppression frequency doubler MMIC for E‐Band transceiver;Chang D.;J. Electromagn. Eng. Sci.,2014
3. Low‐parasitic and common‐centroid cross‐coupled CMOS transistor structure for high‐frequency VCO design;Lee I.Y.;Electron Device Lett.,2009
4. Frequency tuning range extension in LC‐VCOs using negative‐capacitance circuits;Wu Q.;Trans. Circuits Syst. II, Exp. Briefs,2013
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