100 Gb/s and 2 V V π InP Mach‐Zehnder modulator with an n‐i‐p‐n heterostructure
Author:
Affiliation:
1. NTT Device Innovation CenterNTT Corporation3‐1 Morinosato WakamiyaAtsugi‐shiKanagawa Pref.243Japan
2. NTT Device Technology LaboratoriesNTT Corporation3‐1 Morinosato WakamiyaAtsugi‐shiKanagawa Pref.243Japan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.2987
Reference6 articles.
1. InP Integrated Coherent Transmitter for 100 Gb/s DP-QPSK transmission
2. Indium Phosphide Based IQ-Modulators for Coherent Pluggable Optical Transceivers
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