Thin‐film heterojunction field‐effect transistors with multiple subthreshold swings for large‐area/flexible electronics and displays
Author:
Affiliation:
1. IBM Thomas J. Watson Research CenterYorktown HeightsNew YorkUSA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.4597
Reference7 articles.
1. Thin-Film Heterojunction Field-Effect Transistors With Crystalline Si Channels and Low-Temperature PECVD Contacts
2. Thin-Film Silicon Heterojunction FETs for Large Area and Flexible Electronics: Design Parameters and Reliability
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates;IEEE Access;2019
2. Thin-Film Heterojunction FETs on Poly-Si Substrates for High-Stability Driving and Low-Power Amplification;IEEE Electron Device Letters;2018
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