1200 V FS‐IGBT with electric field modulation layer to improve trade‐off between avalanche ruggedness and on‐state voltage drop-Reference-Cited by-同舟云学术

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1200 V FS‐IGBT with electric field modulation layer to improve trade‐off between avalanche ruggedness and on‐state voltage drop

Published:2017-01 Issue:2 Volume:53 Page:100-102
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Yang Zhuo¹,Bian Fangjuan¹,Zhu Jing¹,Sun Weifeng¹,Tian Ye¹,Tong Xin¹,Zhu Yuanzheng²,Ye Peng²

Affiliation:

1. National ASIC System Engineering Research Center, Southeast UniversityNanjingPeople's Republic of China

2. WUXI NCE Power Co., Ltd.WuxiPeople's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.3833

Reference11 articles.

1. Failure dynamics of the IGBT during turn‐off for unclamped inductive loading conditions;Hefner C.‐C.;IEEE Trans. Ind. Appl.,2000

2. Electrothermal simulations in punchthrough and nonpunchthrough IGBT's;Pendharkar S.;IEEE Trans. Electron Dev.,1998

3. 3D electro-thermal simulations of wide area power devices operating in avalanche condition

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid $p^{{+}}/{n}$ Collector Structure;IEEE Journal of the Electron Devices Society;2019

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