Accurate dry etching technique for germanium waveguide by using CHF 3 based inductively coupled plasma-Reference-Cited by-同舟云学术

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Accurate dry etching technique for germanium waveguide by using CHF 3 based inductively coupled plasma

Published:2016-10 Issue:22 Volume:52 Page:1868-1869
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Idris A.S.¹,Jiang H.¹,Hamamoto K.¹

Affiliation:

1. Interdisciplinary Graduate School of Engineering Science, Department of Applied Science for Electronics and MaterialsKyushu UniversityKasugaFukuoka816Japan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.2846

Reference13 articles.

1. A roadmap for nanophotonics

2. Monolithically Integrated Ge-on-Si Active Photonics

3. Influence of waveguide geometry on scattering loss effects in submicron strip silicon‐on‐insulator waveguides;Grillot F.;IET Optoelectron.,2008

4. Loss reduction in silicon nanophotonic waveguide micro-bends through etch profile improvement

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1. Is Ge an excellent material for mid-IR Kerr frequency combs around 3 m wavelengths;Journal of Lightwave Technology;2021

2. Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O2 plasmas;Plasma Sources Science and Technology;2020-10-01

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