Improvement of current drivability in high‐scalable tunnel field‐effect transistors with CMOS compatible self‐aligned process-Reference-Cited by-同舟云学术

Improvement of current drivability in high‐scalable tunnel field‐effect transistors with CMOS compatible self‐aligned process

Published:2016-06 Issue:12 Volume:52 Page:1071-1072
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Kim S.W.¹,Sun M.‐C.²,Park E.³,Kim J.H.³,Kwon D.W.³,Park B.‐G.³

Affiliation:

1. Department of Electrical Engineering and Computer SciencesUniversity of CaliforniaBerkeleyCA94720USA

2. System LSI, Semiconductor Business GroupSamsung Electronics Co. Ltd.Yongin17114Republic of Korea

3. Inter‐university Semiconductor Research Center (ISRC) and Department of Electrical and Computer EngineeringSeoul National UniversitySeoul08826Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.0707

Reference14 articles.

1. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

2. Demonstration of L‐shaped tunnel field‐effect transistors;Kim S.W.;IEEE Trans. Electron Devices

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