Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO2 phase-matched-layer reflector
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2012.0806?crawler=true&mimetype=application/pdf
Reference15 articles.
1. High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode
2. Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes
3. GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06 [micro sign]m
4. Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers
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