Temperature characteristics of Schottky barrier diodes for low-voltage sensing applications
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2012.0318?crawler=true&mimetype=application/pdf
Reference6 articles.
1. A 1-V CMOS Current Reference With Temperature and Process Compensation
2. Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits
3. Temperature-independent output voltage generated by threshold voltage of an NMOS transistor
4. Schottky barrier diodes for millimeter wave detection in a foundry CMOS process
5. Explanation of the linear correlation between barrier heights and ideality factors of real metal-semiconductor contacts by laterally nonuniform Schottky barriers
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3. Offset error reduction using gate‐bulk‐driven error correction amplifier for low‐voltage sub‐bandgap reference;Electronics Letters;2013-05
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