Field emission in lateral silicon diode fabricated by atomic force microscopy lithography
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2012.1020?crawler=true&mimetype=application/pdf
Reference6 articles.
1. P1–18: I-V Characteristics of nanogap electrodes formed by thermally assisted electromigration
2. Carbon nanotubes as field emission sources
3. Carbon nanotubes as electron sources
4. Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography
5. Lateral field emission diodes using SIMOX wafer
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