3–10 GHz self‐biased resistive‐feedback LNA with inductive source degeneration
Author:
Affiliation:
1. Zhejiang UniversityYuQuanHangzhou310027People's Republic of China
2. Nanyang Technological UniversitySingapore639798Singapore
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2012.4472
Reference5 articles.
1. An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers
2. ESD-Protected Wideband CMOS LNAs Using Modified Resistive Feedback Techniques With Chip-on-Board Packaging
3. 6–10 GHz ultra-wideband CMOS LNA
4. A DC-11.5 GHz Low-Power, Wideband Amplifier Using Splitting-Load Inductive Peaking Technique
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