Author:
Sattu A.,Billingsley D.,Deng J.,Yang J.,Simin G.,Shur M.,Gaska R.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference10 articles.
1. AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications
2. ‘Methods of growing Nitride films using varying pulses’, (US Patent 20040224484)
3. Gaska, R., Hu, X., and Shur, M.: ‘Chromium/titanium/aluminum-based semiconductor device contact’, (Patent Application Publication (No.: US 2008/0315419))
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献