Affiliation:
1. Department of Electrical Engineering National Central University Taoyuan Taiwan
Abstract
AbstractTo improve the RX‐mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second‐order band‐stop filter in its TX path, which extends the bandwidth of isolation in the RX mode. Based on the proposed topology, a Q‐band asymmetric T/R switch is designed and implemented in a 0.15‐µm GaAs pHEMT technology. Measured isolation in the RX mode is greater than 18.4 dB from 31.7 to 46.3 GHz, corresponding to a 1.46:1 bandwidth.
Funder
National Science and Technology Council
Qualcomm
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering