Influence of interface states on the capacitance of homo- and heterojunctions
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19670168?crawler=true&mimetype=application/pdf
Reference9 articles.
1. van Overstraeten, R.J.: ‘Charge multiplication in silicon p–n junctions’, October, 1962, Ph.D. dissertation, Stanford University
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