Monolithically integrated 10 Gbit/s photodiode and transimpedance amplifier in thin-film SOI CMOS technology
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20062563?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links-design and realization
2. A wide-dynamic-range, high-transimpedance Si bipolar preamplifier IC for 10-Gb/s optical fiber links
3. A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog front-end
4. A 100-mW 4/spl times/10 Gb/s transceiver in 80-nm CMOS for high-density optical interconnects
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