Comparison between tensile-strained AlGaInP SQW and MQW LDs emitting at 615 nm
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940413?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Tensile strained QW structure for low-threshold operation of short-wavelength AlGaInP LDs emitting in the 630nm band
2. Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier
3. Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers
4. Low-threshold operation of tensile-strained GaInP/AlGaInP MQW LDs emitting at 625 nm
5. Tensile-strained AlGaInP single-quantum-well LDs emitting at 615 nm
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain Effect in Semiconductors;2010
2. Highly reliable 60/spl deg/C 50-mW operation of 650-nm band window-mirror laser diodes;IEEE Photonics Technology Letters;1997-04
3. Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers;IEEE Journal of Quantum Electronics;1997
4. Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double‐heterostructure laser diodes on GaAsP substrates;Applied Physics Letters;1995-02-13
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