Photogenerated carrier sweep-out times in strained InxGa1-xAs/InyAl1-yAs quantum well modulators
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940281?crawler=true&mimetype=application/pdf
Reference12 articles.
1. Simultaneous measurements of electron and hole sweep-out from quantum wells and modeling of photoinduced field screening dynamics
2. Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation
3. High‐speed photoresponse in a reverse biased InGaAs/InP laser structure at 1.54 μm: Experiment and modeling
4. Strained-layer InGaAs/InAlAs multiple quantum wells for efficient optical waveguide modulation at 1.55 μm
5. Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriers
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