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140 GHz indium phosphide Gunn diode

  • Published:1994-03-17 Issue:6 Volume:30 Page:499-500
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:

Author:

Crowley J.D.,Tringali D.R.,Wandinger L.,Wallace B.,Dalrymple R.E.,Fank F.B.,Hang C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications;Journal of Nanoscience and Nanotechnology;2015-07-01

2. Gunn or Transferred-Electron Devices;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-09-16

3. InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators;IEICE Transactions on Electronics;2010

4. Improvement of Fabrication Technology for InP Gunn Devices Using Trench Method;2008 Global Symposium on Millimeter Waves;2008-04

5. Wet Chemical MESA Etching Using HCl-based and FeCl3 Light Sensitive Etchants for InP Gunn Diodes;2008 Global Symposium on Millimeter Waves;2008-04
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