Electrical passivation in hydrogen plasma exposed GaN
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940327?crawler=true&mimetype=application/pdf
Reference8 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
3. Hole Compensation Mechanism of P-Type GaN Films
4. Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy
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