High power and high efficiency operation of Al-free InGaAs/GaInAsP/GaInP GRINSCH SQW lasers (λ ≃ 0.98 µm)
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940816?crawler=true&mimetype=application/pdf
Reference9 articles.
1. High-power operation of aluminum-free ( kappa =0.98 mu m) pump laser for erbium-doped fiber amplifier
2. 0.98-1.02 mu m strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides
3. A periodic index separate confinement heterostructure quantum well laser
4. High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers
5. 0.98 mu m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber
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1. Quantum dot lasers: breakthrough in optoelectronics;Thin Solid Films;2000-05
2. High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser;Journal of Applied Physics;1998-05-15
3. Three-dimensional arrays of self-ordered quantum dots for laser applications;Microelectronics Journal;1997-10
4. Selbstordnende Quantenpunkte: Vom Festkörper zum Atom;Physik Journal;1997-06
5. InGaAs-GaAs quantum-dot lasers;IEEE Journal of Selected Topics in Quantum Electronics;1997-04
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