Transient response measurement of kink effect in InAlAs/InGaAs/InP HEMTs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940037?crawler=true&mimetype=application/pdf
Reference4 articles.
1. Frequency-dependent characteristics and trap studies of lattice-matched (x=0.53) and strained (x<0.53) In/sub 0.52/Al/sub 0.48/As/In/sub x/ Ga/sub 1-x/As HEMTs
2. InAlAs/InGaAs/InP HEMTs with high breakdown voltages using double-recess gate process
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature;Solid-State Electronics;2005-06
2. Correlation between high-voltage kink and substrate current in GaAs MESFETs;Electronics Letters;1998
3. Substrate-related kink effects with a strong light-sensitivity in AlGaAs/InGaAs PHEMT;IEEE Transactions on Electron Devices;1997
4. Electroluminescence from InGaAs/InAlAs HEMTs;Electronics Letters;1994-07-07
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