Backgating characteristics of 0.1µm gate In0.3Ga0.47As/In0.52Al0.48As/InP MODFETs with Er-Doped In0.52Al0.48As buffer layer
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940403?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Substrate current in GaAs MESFET's
2. Backgating studies in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As modulation-doped field-effect transistors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy;Journal of Electronic Materials;1996-03
2. Properties and Growth of MBE Grown Erbium Doped Gallium Arsenide Co-Doped with Selenium;MRS Proceedings;1996
3. Backgating in pseudomorphic In/sub 0.15/Ga/sub 0.85/As/Al/sub 0.25/Ga/sub 0.75/As MODFET's with a GaAs:Er buffer layer;IEEE Electron Device Letters;1995-12
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