Rapid synthesis of gallium oxide resistive random access memory by atomic force microscopy local anodic oxidation
Author:
Affiliation:
1. Institute of Optoelectronic SciencesNational Taiwan Ocean UniversityKeelungTaiwan
2. Graduate Institute of Electro‐Optical EngineeringTatung UniversityTaipeiTaiwan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.0639
Reference8 articles.
1. $\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current
2. Anodic $\hbox{Nb}_{2}\hbox{O}_{5}$ Nonvolatile RRAM
3. Universal Reset characteristics of unipolar and bipolar metal‐oxide RRAM;Ielmini D.;IEEE Trans. Electron Devices,,2012
4. Linear Scaling of Reset Current Down to 22-nm Node for a Novel $\hbox{Cu}_{x}\hbox{Si}_{y}\hbox{O}$ RRAM
5. Formation of aluminum nanodot array by combination of nanoindentation and anodic oxidation of aluminum
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