Reliability Improvement of superluminescent diodes emitting at 1.0 µm band using InGaAsP barrier structure-Reference-Cited by-同舟云学术

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Reliability Improvement of superluminescent diodes emitting at 1.0 µm band using InGaAsP barrier structure

Published:2013-03 Issue:6 Volume:49 Page:409-410
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Ohgoh T.¹,Asano H.¹,Hamamoto K.²

Affiliation:

1. Frontier Core‐Technology LaboratoriesFujifilm Corporation577, Ushijima, Kaisei‐machiAshigarakami‐gunKanagawa258‐8577Japan

2. Interdisciplinary Graduate School of Engineering Sciences (I‐EggS)Kyushu University6‐1, Kasuga‐koenKasugaFukuoka816‐8580Japan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.0080

Reference7 articles.

1. In vivo high-contrast imaging of deep posterior eye by 1-μm swept source optical coherence tomography and scattering optical coherence angiography

2. Optical Constants of Water in the 200-nm to 200-μm Wavelength Region

3. Temperature-insensitive operation of real index guided 1.06 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes

4. 350 mW reliable operation in fundamental transverse-mode InGaAs (=1.05 [micro sign]m)∕ GaAsP strain-compensated laser diodes

5. Facet oxidation of InGaAs/GaAs strained quantum‐well lasers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and characteristics of high speed InGaAs/GaAs quantum-wells superluminescent diode emitting at 1053 nm;Semiconductor Science and Technology;2014-04-02

2. 1.0μm High-power and Broad Spectral Bandwidth Superluminescent Diodes;IEEJ Transactions on Electronics, Information and Systems;2013

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