Verification of theoretical model for collector current in SiGe‐based heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Verification of theoretical model for collector current in SiGe‐based heterojunction bipolar transistors

Published:2013-10 Issue:21 Volume:49 Page:1347-1348
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Hasanah L.¹,Noor F.A.²,Jung C.U.³,Khairurrijal K.²

Affiliation:

1. Department of PhysicsIndonesia Education UniversityJalan Setiabudi 229BandungIndonesia

2. Physics of Electronic Materials Research DivisionFaculty of Mathematics and Natural SciencesInstitut Teknologi BandungBandungIndonesia

3. Physics DepartmentHankuk University of Foreign StudiesYonginRepublic of Korea

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.1839

Reference15 articles.

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3. Coupling between the transverse and longitudinal components of an electron in resonant tunneling;Wang X.;Phys. Rev. B,1995

4. Ultra high‐speed bipolar transistors;Levi A.F.J.;Phys. Today,1990

5. Model of a tunneling current in an anisotropic Si/Si1 − x Ge x /Si heterostructure with a nanometer‐thick barrier including the effect of parallel–perpendicular kinetic energy coupling;Hasanah L.;Semicond. Sci. Technol.,2008

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1. Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor;Journal of Physics: Conference Series;2018-05

2. Effect of Crystal Orientation on Tunneling Currents in an Anisotropic Si/Si 0.5 Ge 0.5 /Si Heterostructure with a Nanometer-thick Barrier;Materials Today: Proceedings;2018

3. Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor;AIP Conference Proceedings;2016