Verification of theoretical model for collector current in SiGe‐based heterojunction bipolar transistors

Author:

Hasanah L.1,Noor F.A.2,Jung C.U.3,Khairurrijal K.2

Affiliation:

1. Department of PhysicsIndonesia Education UniversityJalan Setiabudi 229BandungIndonesia

2. Physics of Electronic Materials Research DivisionFaculty of Mathematics and Natural SciencesInstitut Teknologi BandungBandungIndonesia

3. Physics DepartmentHankuk University of Foreign StudiesYonginRepublic of Korea

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference15 articles.

1. Critical modeling issues of SiGe semiconductor devices;Palankovski V.;J. Telecommun. Inf. Technol.,2004

2. Electron and hole components of tunneling currents through an interfacial oxide‐high‐k gate stack in metal‐oxide‐semiconductor capacitors;Noor F.A.;J. Appl. Phys.,2010

3. Coupling between the transverse and longitudinal components of an electron in resonant tunneling;Wang X.;Phys. Rev. B,1995

4. Ultra high‐speed bipolar transistors;Levi A.F.J.;Phys. Today,1990

5. Model of a tunneling current in an anisotropic Si/Si1 − x Ge x /Si heterostructure with a nanometer‐thick barrier including the effect of parallel–perpendicular kinetic energy coupling;Hasanah L.;Semicond. Sci. Technol.,2008

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