High power operation of multiquantum well DFB lasers at 1.3 µm
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19950894?crawler=true&mimetype=application/pdf
Reference5 articles.
1. High-performance λ=1.3 μm InGaAsP-InP strained-layer quantum well lasers
2. High power quantum-well gain-coupled (GC) DFB lasers at 1.3 μm and 1.55 μm
3. High-power and high-speed performance of gain-coupled 1.3 μm strained-layer MQW DFB lasers
4. Submilliamp threshold current (0.62 mA at 0°C) and high output power (220 mW) 1.5 μm tensile strained InGaAs single quantum well lasers
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5. Threshold currents of 1.3-μm bulk, 1.55-μm bulk, and 1.55-μm MQW DFB P-substrate partially inverted buried heterostructure laser diodes;IEEE Journal of Quantum Electronics;1998-03
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