K-band GaInAs/InP channel power HEMTs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19950482?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Off-state breakdown in InAlAs/InGaAs MODFET's
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation of New Multi-Channel HEMT Based on InAs0.3P0.7/InP for Future Power Terahertz HEMT’s;International Journal of Nanoscience;2020-12-10
2. High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy;Japanese Journal of Applied Physics;2008-04-25
3. High Electron Mobility Transistors (HEMTs);Electrical Engineering Handbook;2007-12-22
4. High Electron Mobility Transistors;RF and Microwave Semiconductor Device Handbook;2002-10-28
5. A 0.15-μm 60-GHz high-power composite channel GaInAs/InP HEMT with low gate current;IEEE Electron Device Letters;2001-06
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